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BD241ATU

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BD241ATU

TRANS NPN 60V 3A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BD241ATU is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. This component offers a 60V collector-emitter breakdown voltage and a maximum collector current of 3A, with a power dissipation capability of 40W. Featuring a minimum DC current gain (hFE) of 25 at 1A and 4V, and a saturation voltage (Vce Sat) of 1.2V at 600mA and 3A, the BD241ATU ensures efficient operation. The transistor is housed in a standard TO-220-3 package, facilitating through-hole mounting. Its operating temperature range extends to 150°C (TJ). This device finds utility in various industrial and consumer electronics sectors requiring robust power amplification and switching capabilities.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.2V @ 600mA, 3A
Current - Collector Cutoff (Max)300µA
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1A, 4V
Frequency - Transition-
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max40 W

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