BD239CTU
TRANS NPN 100V 2A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BD239CTU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a 100V collector-emitter breakdown voltage and a maximum collector current of 2A. With a power dissipation of 30W, it is suitable for moderate power handling requirements. The transistor exhibits a minimum DC current gain (hFE) of 15 at 1A collector current and 4V collector-emitter voltage, and a saturation voltage (Vce(sat)) of 700mV at 200mA base current and 1A collector current. The BD239CTU is provided in a TO-220-3 through-hole package, facilitating ease of mounting on printed circuit boards. This component finds application in power supply circuits, audio amplifiers, and control systems across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 300µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 30 W |
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