BD238G
TRANS PNP 80V 2A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BD238G is a PNP bipolar junction transistor (BJT) designed for power switching and amplification applications. This through-hole component features a collector-emitter breakdown voltage (Vce) of 80V and a maximum continuous collector current (Ic) of 2A. With a power dissipation capability of 25W and a transition frequency of 3MHz, it is suitable for general-purpose power linear and switching applications. Key specifications include a minimum DC current gain (hFE) of 40 at 150mA and 2V, and a saturation voltage (Vce(sat)) of 600mV maximum at 100mA and 1A. The device operates across a temperature range of -55°C to 150°C and is packaged in a TO-126 (TO-225AA) format. This transistor finds utility in various industrial, consumer, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 25 W |
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