BD180G
TRANS PNP 80V 1A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BD180G is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in a TO-126 package. This component offers an 80V collector-emitter breakdown voltage and a maximum collector current of 1A. With a power dissipation capability of 30W and a transition frequency of 3MHz, it is suitable for power switching and amplification applications. The BD180G exhibits a minimum DC current gain (hFE) of 40 at 150mA and 2V, and a Vce (sat) of 800mV at 100mA and 1A. It is rated for an operating temperature range of -65°C to 150°C. This transistor is commonly found in industrial and consumer electronics power supply circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 7 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1mA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 30 W |
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