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BD180

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BD180

TRANS PNP 80V 3A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BD180 is a PNP bipolar junction transistor (BJT) designed for robust power applications. This through-hole component, housed in a TO-126 package, offers a maximum collector emitter breakdown voltage of 80V and a continuous collector current capability of 3A. It features a maximum power dissipation of 30W and a transition frequency of 3MHz. The DC current gain (hFE) is a minimum of 40 at 150mA and 2V. The collector cutoff current (ICBO) is specified at 1mA, with a Vce saturation of 800mV at 100mA and 1A. This device is suitable for general-purpose amplification and switching in industrial, automotive, and consumer electronics markets.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic800mV @ 100mA, 1A
Current - Collector Cutoff (Max)1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Frequency - Transition3MHz
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max30 W

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