BD179G
TRANS NPN 80V 3A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BD179G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage (Vce) of 80V and a continuous collector current (Ic) capability of up to 3A. With a transition frequency (fT) of 3MHz and a maximum power dissipation of 30W, the BD179G is suitable for use in industrial control systems, power supplies, and audio amplification circuits. It offers a minimum DC current gain (hFE) of 63 at 150mA and 2V, and a maximum Vce saturation of 800mV at 100mA and 1A. The transistor is housed in a TO-126 (TO-225AA) package for through-hole mounting and operates within a temperature range of -65°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 30 W |
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