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BD17510STU

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BD17510STU

TRANS NPN 45V 3A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BD17510STU is a through-hole NPN bipolar junction transistor (BJT) designed for power switching and amplification applications. It features a 45V collector-emitter breakdown voltage (VCEO) and a continuous collector current capability of 3A. With a maximum power dissipation of 30W and a transition frequency of 3MHz, this device is suitable for use in industrial automation, automotive systems, and power management circuits. The BD17510STU is housed in a TO-126-3 (TO-225AA) package, offering robust thermal performance up to a junction temperature of 150°C. Key electrical characteristics include a minimum DC current gain (hFE) of 63 at 150mA and 2V, and a VCE(sat) of 800mV at 100mA and 1A. The collector cutoff current (ICBO) is rated at a maximum of 100µA.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic800mV @ 100mA, 1A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA, 2V
Frequency - Transition3MHz
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max30 W

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