BD159G
TRANS NPN 350V 0.5A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BD159G is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-126 package. This component offers a maximum collector current (Ic) of 500 mA and a high collector-emitter breakdown voltage (Vce) of 350 V. It features a maximum power dissipation of 20 W and a minimum DC current gain (hFE) of 30 at 50 mA and 10 V. The operating temperature range is from -65°C to 150°C. This transistor is suitable for applications in power supply circuits, audio amplifiers, and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 20 W |
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