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BD159

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BD159

TRANS NPN 350V 0.5A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BD159 is a high-voltage NPN bipolar junction transistor (BJT) designed for robust performance. Featuring a collector-emitter breakdown voltage (Vce) of 350V and a continuous collector current (Ic) capability of 500mA, this device is well-suited for power switching and amplification applications. The BD159 offers a maximum power dissipation of 20W and a minimum DC current gain (hFE) of 30 at 50mA and 10V. It operates across a wide temperature range from -65°C to 150°C. The TO-126 package, also known as TO-225AA, facilitates through-hole mounting for ease of integration into circuit designs. This component finds application in power supplies, audio amplifiers, and general-purpose switching circuits within the industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Frequency - Transition-
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)350 V
Power - Max20 W

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