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BD158STU

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BD158STU

TRANS NPN 300V 0.5A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi BD158STU is a high-voltage NPN bipolar junction transistor (BJT) designed for robust performance in power switching and amplification applications. This component features a maximum collector-emitter breakdown voltage of 300 V and a continuous collector current capability of 500 mA. With a maximum power dissipation of 20 W and a TO-126-3 (TO-225AA) through-hole package, it offers effective thermal management for demanding environments. The device exhibits a minimum DC current gain (hFE) of 30 at 50 mA and 10 V, ensuring reliable amplification characteristics. It is supplied in a tube for efficient handling and integration into automated assembly processes. The BD158STU is commonly employed in industrial power supplies, lighting control, and general-purpose switching circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)300 V
Power - Max20 W

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