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BD157STU

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BD157STU

TRANS NPN 250V 0.5A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi BD157STU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, housed in a TO-126-3 (TO-225AA) package, offers a collector emitter breakdown voltage of 250V and a continuous collector current capability of 500mA. It dissipates a maximum power of 20W. The device exhibits a minimum DC current gain (hFE) of 30 at 50mA collector current and 10V collector emitter voltage. The typical collector cutoff current (ICBO) is 100µA. Applications for this transistor include power supply circuits, audio amplifiers, and general control systems in industrial and consumer electronics. The component is supplied in a tube.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)250 V
Power - Max20 W

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