BD1406STU
TRANS PNP 80V 1.5A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BD1406STU is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector current rating of 1.5 A and a collector-emitter breakdown voltage of 80 V. With a maximum power dissipation of 1.25 W and an operating junction temperature of 150°C, it is suitable for demanding environments. The BD1406STU is packaged in a TO-126-3 (TO-225AA) through-hole configuration, facilitating easy board mounting. Key electrical specifications include a DC current gain (hFE) of 40 minimum at 150 mA and 2 V, and a Vce saturation of 500 mV maximum at 50 mA base current and 500 mA collector current. The collector cutoff current (ICBO) is specified at 100 nA. This device finds application in consumer electronics, industrial control systems, and power management circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.25 W |
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