BD1406S
TRANS PNP 80V 1.5A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BD1406S PNP Bipolar Junction Transistor (BJT) in a TO-126-3 (TO-225AA) through-hole package. This device offers a maximum collector current (Ic) of 1.5A and a collector-emitter breakdown voltage (Vce(max)) of 80V. It features a maximum power dissipation of 1.25W and an operating junction temperature of 150°C. Key parameters include a minimum DC current gain (hFE) of 40 at 150mA and 2V, and a Vce(sat) of 500mV at 50mA/500mA. The collector cutoff current (Icbo) is 100nA. This component finds application in general-purpose amplification and switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.25 W |
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