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BD14016S

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BD14016S

TRANS PNP 80V 1.5A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi BD14016S, a PNP bipolar junction transistor, offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1.5A. This device features a maximum power dissipation of 1.25W and is housed in a TO-126-3 (TO-225AA) package, suitable for through-hole mounting. The specified DC current gain (hFE) is a minimum of 40 at 150mA and 2V. The collector cutoff current (ICBO) is rated at a maximum of 100nA. The saturation voltage (Vce Saturation) is a maximum of 500mV at 50mA base current and 500mA collector current. This component finds application in power switching and amplification circuits across various industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max1.25 W

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