BD14010STU
TRANS PNP 80V 1.5A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BD14010STU is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a collector-emitter breakdown voltage (Vce) of 80 V and a maximum continuous collector current (Ic) of 1.5 A. With a power dissipation rating of 1.25 W and an operating junction temperature up to 150°C, it is suitable for demanding environments. Key electrical characteristics include a minimum DC current gain (hFE) of 63 at 150mA and 2V, and a saturation voltage (Vce(sat)) of 500mV at 50mA and 500mA. The TO-126-3 package (TO-225AA) facilitates straightforward board mounting. Applications include power supply circuits, audio amplifiers, and control systems within the consumer electronics and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.25 W |
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