BD1396S
TRANS NPN 80V 1.5A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BD1396S NPN Bipolar Junction Transistor. This through-hole component features a 1.5 A collector current and an 80 V collector-emitter breakdown voltage. With a maximum power dissipation of 1.25 W and an operating junction temperature of 150°C, it offers a minimum DC current gain (hFE) of 40 at 150 mA and 2 V. The saturation voltage (Vce) is a maximum of 500 mV at 50 mA base current and 500 mA collector current, with a collector cutoff current (ICBO) of 100 nA. The TO-126-3 package facilitates integration into various electronic systems. This transistor is commonly employed in industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.25 W |
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