BD13916S
TRANS NPN 80V 1.5A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BD13916S is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a breakdown voltage of 80V (V(BR)CEO) and a maximum continuous collector current (IC) of 1.5A. With a power dissipation of 1.25W and a junction temperature capability of 150°C, it is suitable for demanding environments. The DC current gain (hFE) is a minimum of 100 at 150mA and 2V (VCE). The saturation voltage (VCE(sat)) is a maximum of 500mV at 50mA (IB) and 500mA (IC). Packaged in a TO-126-3 (TO-225AA) through-hole configuration, the BD13916S finds utility in power supply circuits, audio amplifiers, and various industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.25 W |
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