BD13910STU
TRANS NPN 80V 1.5A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BD13910STU NPN Bipolar Junction Transistor. This device offers an 80V collector-emitter breakdown voltage and a continuous collector current capability of 1.5A, with a maximum power dissipation of 1.25W. Key electrical characteristics include a minimum DC current gain (hFE) of 63 at 150mA and 2V, and a Vce(sat) of 500mV at 50mA and 500mA. Collector cutoff current (ICBO) is specified at a maximum of 100nA. The transistor is housed in a TO-126-3 (TO-225AA) package suitable for through-hole mounting and operates at junction temperatures up to 150°C. This component is commonly utilized in power switching and amplification applications across industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.25 W |
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