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BD1386STU

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BD1386STU

TRANS PNP 60V 1.5A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi BD1386STU is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a maximum collector current (Ic) of 1.5 A and a collector-emitter breakdown voltage (Vce(max)) of 60 V. The device offers a minimum DC current gain (hFE) of 40 at 150 mA and 2 V, with a Vce(sat) of 500 mV at 50 mA and 500 mA. With a maximum power dissipation of 1.25 W and an operating junction temperature of 150°C, the BD1386STU is housed in a TO-126-3 package. This component is commonly utilized in industrial and consumer electronics power management circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1.25 W

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