BD1386S
TRANS PNP 60V 1.5A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's BD1386S is a PNP bipolar junction transistor designed for general purpose amplification and switching applications. This through-hole component, housed in a TO-126-3 package, offers a maximum collector emitter breakdown voltage of 60V and a continuous collector current capability of 1.5A. It exhibits a power dissipation of 1.25W and a minimum DC current gain (hFE) of 40 at 150mA and 2V. The saturation voltage (Vce Sat) is specified at a maximum of 500mV for an operating point of 50mA base current and 500mA collector current. The device operates within a junction temperature range of 150°C and features a low collector cutoff current (ICBO) of 100nA. Industries utilizing this transistor include consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.25 W |
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