BD13816STU
TRANS PNP 60V 1.5A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BD13816STU is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in a TO-126-3 package. This component offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of up to 1.5A. Key electrical characteristics include a maximum power dissipation of 1.25W and a minimum DC current gain (hFE) of 100 at 150mA and 2V. The saturation voltage (Vce Sat) is specified at a maximum of 500mV for an operating point of 50mA base current and 500mA collector current. Collector cutoff current (ICBO) is rated at a maximum of 100nA. This transistor operates reliably at junction temperatures up to 150°C and finds application in general-purpose amplification and switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.25 W |
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