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BD13810S

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BD13810S

TRANS PNP 60V 1.5A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi BD13810S is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a 60V collector-emitter breakdown voltage and a maximum collector current of 1.5A, with a continuous power dissipation of 1.25W. The BD13810S offers a minimum DC current gain (hFE) of 63 at 150mA and 2V. Saturation voltage is specified at 500mV maximum for an Ic of 500mA driven by 50mA base current. The transistor is housed in a TO-126-3 (TO-225AA) package, suitable for through-hole mounting. It operates reliably up to a junction temperature of 150°C. This component finds use in industrial automation, power control circuits, and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA, 2V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1.25 W

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