BD13710S
TRANS NPN 60V 1.5A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BD13710S NPN Bipolar Junction Transistor (BJT). This device features a 60V collector-emitter breakdown voltage and a maximum continuous collector current (Ic) of 1.5A. With a maximum power dissipation of 1.25W and a minimum DC current gain (hFE) of 63 at 150mA and 2V, it is suitable for general-purpose amplification and switching applications. The saturation voltage (Vce Saturation) is specified at 500mV maximum for an Ic of 500mA driven by 50mA of base current. Operating temperature up to 150°C (TJ). Presented in a TO-126-3 (TO-225AA) through-hole package. Used in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.25 W |
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