BD137
TRANS NPN 60V 1.5A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BD137 NPN Bipolar Junction Transistor (BJT) in a TO-126 package. This device offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 1.5A. The BD137 features a maximum power dissipation of 1.25W and a saturation voltage (Vce(sat)) of 500mV at 50mA collector current with a 50mA base current. Its DC current gain (hFE) is a minimum of 40 at 150mA collector current and 2V collector-emitter voltage. The collector cutoff current (ICBO) is rated at 100nA (max). This component is commonly utilized in power supply circuits, audio amplifiers, and general-purpose switching applications across various industrial and consumer electronics sectors. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.25 W |
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