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BD1366S

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BD1366S

TRANS PNP 45V 1.5A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi BD1366S is a PNP bipolar junction transistor (BJT) designed for through-hole mounting within a TO-126-3 (TO-225AA) package. This component offers a maximum collector current of 1.5 A and a collector-emitter breakdown voltage of 45 V. The transistor exhibits a typical DC current gain (hFE) of 40 at 150 mA and 2 V. Its maximum power dissipation is rated at 1.25 W, with an operating junction temperature of up to 150°C. The saturation voltage (Vce Sat) is specified at a maximum of 500 mV with a collector current of 500 mA and a base current of 50 mA. This device finds application in power switching and amplification circuits across various industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max1.25 W

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