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BD13616S

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BD13616S

TRANS PNP 45V 1.5A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi BD13616S is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector current (Ic) of 1.5 A and a collector-emitter breakdown voltage (Vce) of 45 V. With a maximum power dissipation of 1.25 W and an operating junction temperature of up to 150°C, it offers robust performance. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 2V, and a saturation voltage (Vce(sat)) of 500mV at 50mA and 500mA. Packaged in a TO-126-3 (TO-225AA) through-hole configuration, the BD13616S is suitable for use in industrial automation, consumer electronics, and power management circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 2V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max1.25 W

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