BD135TG
TRANS NPN 45V 1.5A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BD135TG is a general-purpose NPN bipolar junction transistor (BJT) designed for a variety of electronic applications. This component offers a collector-emitter breakdown voltage of 45V and a continuous collector current of up to 1.5A, with a maximum power dissipation of 1.25W. The DC current gain (hFE) is a minimum of 40 at 150mA collector current and 2V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at a maximum of 500mV for a base current of 50mA and a collector current of 500mA. This device features a low collector cutoff current (ICBO) of 100nA. The BD135TG is packaged in a TO-126 (TO-225AA) through-hole package and is supplied in tubes. It is suitable for use in switching and amplification circuitry within consumer electronics, industrial controls, and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 1.25 W |
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