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BD1356S

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BD1356S

TRANS NPN 45V 1.5A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BD1356S is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 45V and a continuous collector current capability of up to 1.5A, with a maximum power dissipation of 1.25W. It is specified with a minimum DC current gain (hFE) of 40 at 150mA and 2V, and a saturation voltage (Vce(sat)) of 500mV at 50mA base current and 500mA collector current. The collector cutoff current (ICBO) is a maximum of 100nA. Offered in a TO-126-3 (TO-225AA) through-hole package, the BD1356S is suitable for use in industrial control, power management, and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max1.25 W

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