BD13516S
TRANS NPN 45V 1.5A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BD13516S is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 45V collector-emitter breakdown voltage and a continuous collector current capability of 1.5A. With a maximum power dissipation of 1.25W, it is housed in a TO-126-3 (TO-225AA) package, suitable for through-hole mounting. The BD13516S exhibits a minimum DC current gain (hFE) of 100 at 150mA and 2V, and a saturation voltage (Vce(sat)) of 500mV at 50mA base current and 500mA collector current. The collector cutoff current (ICBO) is rated at a maximum of 100nA. This device operates at junction temperatures up to 150°C and is often utilized in industrial automation, consumer electronics, and power supply circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 1.25 W |
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