BD13510STU
TRANS NPN 45V 1.5A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BD13510STU is a silicon NPN bipolar junction transistor (BJT) in a TO-126-3 package, designed for general-purpose amplification and switching applications. This device offers a maximum collector-emitter breakdown voltage (Vce) of 45V and can handle a continuous collector current (Ic) of up to 1.5A. With a maximum power dissipation of 1.25W and an operating junction temperature of 150°C, it is suitable for demanding environments. Key electrical characteristics include a minimum DC current gain (hFE) of 63 at 150mA and 2V, and a collector-emitter saturation voltage (Vce(sat)) of 500mV at 50mA base current and 500mA collector current. The BD13510STU is commonly utilized in power supply circuits, motor control, and audio amplification across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 1.25 W |
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