BD13510S
TRANS NPN 45V 1.5A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BD13510S is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage (Vceo) of 45V and a continuous collector current (Ic) capability of 1.5A. With a maximum power dissipation of 1.25W, it is suitable for moderate power handling. The DC current gain (hFE) is specified at a minimum of 63 at 150mA and 2V. Saturation voltage (Vce(sat)) is 500mV at 50mA/500mA. The transistor is housed in a TO-126-3 (TO-225AA) through-hole package, facilitating easy board mounting. It operates reliably at junction temperatures up to 150°C. This device finds utility in various electronics manufacturing sectors, including industrial controls and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 1.25 W |
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