BCX56-10R1
TRANS NPN 80V 1A SOT89-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BCX56-10R1 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 80V and a continuous collector current rating of 1A. With a transition frequency of 130MHz, it is suitable for moderate frequency circuits. The minimum DC current gain (hFE) is 63 at 150mA and 2V. The transistor exhibits a Vce(sat) of 500mV at 50mA collector current and 50mA base current. It has a maximum power dissipation of 1.56W and an operating temperature range of -65°C to 150°C. The BCX56-10R1 is supplied in a SOT-89-3 package, also known as TO-243AA, and is available on tape and reel. This component finds application in consumer electronics, industrial control, and automotive systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | SOT-89-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.56 W |