BCW66GLT1
TRANS NPN 45V 0.8A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BCW66GLT1 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 800mA. The transition frequency is rated at 100MHz, with a maximum power dissipation of 300mW. It offers a minimum DC current gain (hFE) of 160 at 100mA and 1V, and a collector cutoff current of 20nA. The Vce saturation is specified at a maximum of 700mV for 50mA base current and 500mA collector current. The BCW66GLT1 is supplied in a SOT-23-3 (TO-236) surface-mount package, delivered on tape and reel. This device is commonly utilized in consumer electronics, industrial control systems, and telecommunications infrastructure.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 20nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 300 mW |
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