BCW65CLT1
TRANS NPN 32V 0.8A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BCW65CLT1 is an NPN bipolar junction transistor designed for general-purpose amplification and switching. This component features a collector-emitter breakdown voltage of 32V and a continuous collector current capability of 800mA. With a transition frequency of 100MHz and a minimum DC current gain (hFE) of 250 at 100mA and 1V, it offers efficient performance in demanding applications. The device is housed in a compact SOT-23-3 (TO-236) surface-mount package, suitable for high-density board designs. Its maximum power dissipation is rated at 225mW, and it operates across a wide temperature range from -55°C to 150°C. This transistor finds utility in various electronic systems, including consumer electronics, industrial control, and telecommunications infrastructure. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 20nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 225 mW |
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