BCW60B
TRANS NPN 32V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BCW60B, an NPN bipolar junction transistor, offers a 32V collector-emitter breakdown voltage and a maximum collector current of 100mA. This surface mount device, packaged in a SOT-23-3 configuration, features a transition frequency of 125MHz and a power dissipation capability of 350mW. Key parameters include a minimum DC current gain (hFE) of 180 at 2mA/5V and a Vce(sat) of 550mV at 1.25mA/50mA. The collector cutoff current is rated at a maximum of 20nA. This component is commonly utilized in general-purpose amplification and switching applications across various industrial and consumer electronics sectors. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 1.25mA, 50mA |
| Current - Collector Cutoff (Max) | 20nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 5V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 350 mW |
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