BCW60A
TRANS NPN 32V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BCW60A is an NPN bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 32V and a continuous collector current capability of 100mA. With a transition frequency of 125MHz and a maximum power dissipation of 350mW, the BCW60A is suitable for general-purpose amplification and switching in consumer electronics, industrial control systems, and telecommunications equipment. The device offers a minimum DC current gain (hFE) of 120 at 2mA collector current and 5V collector-emitter voltage. It is supplied in a SOT-23-3 package, delivered on tape and reel. Saturation voltage (Vce(sat)) is specified at a maximum of 550mV for an operating point of 1.25mA base current and 50mA collector current, with a collector cutoff current (Icbo) not exceeding 20nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 1.25mA, 50mA |
| Current - Collector Cutoff (Max) | 20nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 5V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 350 mW |
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