BCW33LT1
TRANS NPN 32V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BCW33LT1 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a maximum collector current (Ic) of 100 mA and a collector-emitter breakdown voltage (Vce) of 32 V. It offers a typical minimum DC current gain (hFE) of 420 at 2 mA collector current and 5 V Vce. The transistor has a maximum power dissipation of 300 mW and a Vce saturation of 250 mV at 500 µA base current and 10 mA collector current. The collector cutoff current (Icbo) is a maximum of 100 nA. Packaged in a SOT-23-3 (TO-236) surface mount case, the BCW33LT1 is supplied on tape and reel. This transistor is suitable for general-purpose amplification and switching applications across various electronic systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 300 mW |
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