BCW31
TRANS NPN 32V 0.5A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BCW31 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 32V and a continuous collector current capability of 500mA. With a transition frequency of 200MHz and a maximum power dissipation of 350mW, it is suitable for general-purpose amplification and switching in consumer electronics and industrial control systems. The device offers a minimum DC current gain (hFE) of 110 at 2mA collector current and 5V collector-emitter voltage. Its saturation voltage (Vce(sat)) is a maximum of 250mV at 500µA base current and 10mA collector current. The BCW31 is supplied in a SOT-23-3 (TO-236-3, SC-59) package and is available on tape and reel. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA, 5V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 350 mW |
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