BCP56-10T3G
TRANS NPN 80V 1A SOT223Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BCP56-10T3G is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. With a transition frequency of 130MHz and a maximum power dissipation of 1.5W, it is suitable for use in industrial, automotive, and consumer electronics. The minimum DC current gain (hFE) is specified at 63 at 150mA and 2V. The transistor is provided in a SOT-223 (TO-261) surface-mount package, supplied on tape and reel. Key parameters include a Vce(sat) of 500mV at 50mA/500mA and a collector cutoff current (ICBO) of 100nA. The operating temperature range is -65°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | SOT-223 (TO-261) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.5 W |
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