BCP56
TRANS NPN 80V 1.2A SOT223-4Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BCP56 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a maximum collector-emitter breakdown voltage of 80V and a continuous collector current rating of 1.2A. With a power dissipation capability of 1W, it is suitable for moderate power handling. The transistor exhibits a minimum DC current gain (hFE) of 40 at 150mA and 2V. The saturation voltage (Vce(sat)) is specified at a maximum of 500mV for an Ic of 500mA and Ib of 50mA. The BCP56 is supplied in a SOT-223-4 surface mount package, also known as TO-261-4 or TO-261AA. It operates across a temperature range of -55°C to 150°C. This component finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-223-4 |
| Current - Collector (Ic) (Max) | 1.2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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