BC859CMTF
TRANS PNP 30V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC859CMTF, a PNP bipolar junction transistor, offers a 30V collector-emitter breakdown voltage and a maximum collector current of 100mA. This device features a transition frequency of 150MHz and a maximum power dissipation of 310mW. Designed for surface mounting, it utilizes the SOT-23-3 package. Key electrical characteristics include a minimum DC current gain (hFE) of 420 at 2mA and 5V, and a Vce(sat) of 650mV at 5mA and 100mA. The collector cutoff current (ICBO) is a maximum of 15nA. The operating junction temperature range extends to 150°C. This component is commonly found in applications within the consumer electronics and industrial sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 310 mW |
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