BC859CLT1G
TRANS PNP 30V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
onsemi BC859CLT1G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a 30V collector-emitter breakdown voltage and a maximum continuous collector current of 100mA. With a transition frequency of 100MHz, it is suitable for moderate frequency circuits. The DC current gain (hFE) is specified at a minimum of 420 at 2mA collector current and 5V collector-emitter voltage. The transistor offers a maximum power dissipation of 300mW and operates within a temperature range of -55°C to 150°C. The BC859CLT1G is supplied in a SOT-23-3 surface-mount package, commonly known as TO-236-3 or SC-59, and is delivered in a tape and reel (TR) format. This component finds application in consumer electronics, industrial control, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 300 mW |
Request a Quote
Clients Also Buy
MCH6203-TL-E
TRANS NPN 50V 1A 6MCPH
BC560CTA
TRANS PNP 45V 0.1A TO92-3
MJE371G
TRANS PNP 40V 4A TO126
