BC859CLT1
TRANS PNP 30V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC859CLT1 is a PNP bipolar junction transistor designed for general-purpose switching and amplification applications. This surface-mount device, housed in a SOT-23-3 (TO-236) package, offers a collector-emitter breakdown voltage of 30V and a continuous collector current of up to 100mA. It features a minimum DC current gain (hFE) of 420 at 2mA and 5V, with a transition frequency of 100MHz. The BC859CLT1 dissipates a maximum power of 300mW and operates within an extended temperature range of -55°C to 150°C. It is supplied in tape and reel packaging. This component is commonly utilized in consumer electronics, industrial control systems, and telecommunications infrastructure.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 300 mW |
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