BC859BLT1G
TRANS PNP 30V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC859BLT1G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device offers a collector-emitter breakdown voltage of 30V and a continuous collector current capability of 100mA. It features a transition frequency of 100MHz and a maximum power dissipation of 300mW. The minimum DC current gain (hFE) is specified as 220 at 2mA collector current and 5V collector-emitter voltage. The Vce(sat) is a maximum of 650mV at 5mA base current and 100mA collector current. Operating temperature ranges from -55°C to 150°C. This component is supplied in a SOT-23-3 (TO-236) surface-mount package, delivered on tape and reel. It is commonly employed in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 300 mW |
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