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BC859AMTF

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BC859AMTF

TRANS PNP 30V 0.1A SOT23-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BC859AMTF is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 30 V and a maximum collector current (Ic) of 100 mA. With a transition frequency of 150 MHz and a maximum power dissipation of 310 mW, it is suitable for general-purpose amplification and switching. The DC current gain (hFE) is a minimum of 110 at 2 mA collector current and 5 V collector-emitter voltage. The transistor is supplied in a SOT-23-3 package, delivered on tape and reel. It finds application in industrial automation, consumer electronics, and communication systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA, 5V
Frequency - Transition150MHz
Supplier Device PackageSOT-23-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max310 mW

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