BC858BWT1
TRANS PNP 30V 0.1A SC70-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC858BWT1 is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage (Vce) of 30V and a maximum continuous collector current (Ic) of 100mA. It features a transition frequency (fT) of 100MHz and a maximum power dissipation of 150mW. The BC858BWT1 is supplied in an SC-70-3 (SOT323) package and is available on tape and reel. The device exhibits a minimum DC current gain (hFE) of 220 at 2mA collector current and 5V collector-emitter voltage, with a Vce(sat) of 650mV at 5mA base current and 100mA collector current. Typical applications include amplification and switching circuits in consumer electronics, industrial control, and automotive systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-70-3 (SOT323) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 150 mW |
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