BC858ALT1
TRANS PNP 30V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC858ALT1 is a PNP bipolar junction transistor designed for surface mount applications. This device features a 30V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 100MHz and a power dissipation of 300mW, it is suitable for general-purpose amplification and switching in consumer electronics and industrial control systems. Key specifications include a minimum DC current gain (hFE) of 125 at 2mA collector current and 5V collector-emitter voltage, and a Vce(sat) of 650mV at 5mA base current and 100mA collector current. The transistor is supplied in a SOT-23-3 (TO-236) package, presented on tape and reel. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 300 mW |
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