onsemi PNP Bipolar Junction Transistor (BJT), part number BC856BWT1. This general-purpose NPN transistor features a maximum collector-emitter voltage (Vceo) of 65V and a continuous collector current (Ic) of 100mA. Packaged in a compact SOT-323 surface-mount case, this device is suitable for a wide range of applications including amplification and switching in consumer electronics, industrial control systems, and telecommunications equipment. The BC856BWT1 offers efficient operation with its bipolar junction characteristics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet: