BC856ALT3G
TRANS PNP 65V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC856ALT3G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 65V and a continuous collector current capability of 100mA. The transistor exhibits a minimum DC current gain (hFE) of 125 at 2mA collector current and 5V collector-emitter voltage. Its transition frequency is 100MHz, making it suitable for moderate frequency circuits. The power dissipation is rated at 300mW.
The BC856ALT3G is packaged in a SOT-23-3 (TO-236) surface-mount configuration and supplied on tape and reel for automated assembly. Typical applications include audio amplification, switching circuits, and general-purpose analog signal processing across various industrial and consumer electronics sectors. The device operates within an ambient temperature range of -55°C to 150°C. Saturation voltage (Vce(sat)) is specified at 650mV maximum at 5mA base current and 100mA collector current. Collector cutoff current (ICBO) is a maximum of 15nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 300 mW |
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