BC856ALT3
TRANS PNP 65V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC856ALT3 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage (Vce) of 65 V and a continuous collector current (Ic) capability of 100 mA. The device features a transition frequency (fT) of 100 MHz and a maximum power dissipation of 300 mW. With a minimum DC current gain (hFE) of 125 at 2 mA and 5 V, it provides efficient amplification. The transistor's collector cutoff current (ICBO) is a low 15 nA. The BC856ALT3 is housed in a SOT-23-3 (TO-236) surface-mount package, supplied on tape and reel. It is suitable for operation across a temperature range of -55°C to 150°C. Typical applications include consumer electronics, industrial control, and communication systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 300 mW |
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